Samsung MZ-V7S1T0BW 970 Evo Plus Nvme Pcie Gen.3 1TB
Samsung V-NAND technology
Up to 3,500 MB/s read and 3,300 MB/s write speeds
Up to 1,200 TBW or 5-year limited warranty
Application Client PCs
Interface PCIe Gen 3.0 x 4, NVMe 1.3
Performance Up to 3,500 MB/s * Performance may vary based on system hardware & configuration
Sequential WriteUp to 3,300 MB/s * Performance may vary based on system hardware & configuration
General Feature
Application Client PCs
Rated Capacity1,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form FactorM.2 (2280)
Interface PCIe Gen 3.0 x 4, NVMe 1.3
Storage MemorySamsung V-NAND 3-bit MLC
Controller Samsung in-house controller
Cache Memory Samsung 1GB Low Power DDR4 SDRAM
Special Feature
TRIM Support Supported
S.M.A.R.T Support Supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Sequential ReadUp to 3,500 MB/s * Performance may vary based on system hardware & configuration
Sequential WriteUp to 3,300 MB/s * Performance may vary based on system hardware & configuration
Random Read (4KB, QD32) Up to 600,000 IOPS * Performance may vary based on system hardware & configuration
Random Write (4KB, QD32)Up to 550,000 IOPS * Performance may vary based on system hardware & configuration
Random Read (4KB, QD1)Up to 19,000 IOPS * Performance may vary based on system hardware & configuration
Random Write (4KB, QD1)Up to 60,000 IOPS * Performance may vary based on system hardware & configuration
Environment
Average Power Consumption (system level)* Average: 6 W * Maximum: 9 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle)Max. 30 mW * Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage3.3 V ± 5 % Allowable voltage
Reliability (MTBF)1.5 Million Hours Reliability (MTBF)
Operating Temperature0 - 70 ℃ Operating Temperature