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Specification Tables

1 results

Single Bipolar Junction Transistors

single-bipolar-junction-transistors-img

Transistor Case Style

TO-220, TO-3, SOT-23, TO-39, TO-205AD

Collector Emitter Voltage Max

60 V, 25 V, 250 V, 40 V, 400 V

Power Dissipation

10 W, 5 W, 150 W, 1.4 W, 3 W

DC Current Gain hFE

10 hFE, 240 hFE, 8 hFE, 200 hFE, 450 hFE

Transition Frequency

400 MHz, 400kHz, 250 MHz, 4 MHz, 70 MHz

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Rs Pro 2377254 Inductive Barrel-Style Proximity Sensor, M12 X 1, 8 Mm Detection, NPN/PNP Output, IP67

Rs Pro 2377249 Inductive Barrel-Style Proximity Sensor, M12 X 1, 8 Mm Detection, NPN/PNP Output, IP67

Rs Pro 2377246 Inductive Barrel-Style Proximity Sensor, M12 X 1, 4 Mm Detection, NPN/PNP Output, IP67

Rs Pro 2377250 Inductive Barrel-Style Proximity Sensor, M12 X 1, 4 Mm Detection, NPN/PNP Output, IP67

Rs Pro 2377248 Inductive Barrel-Style Proximity Sensor, M12 X 1, 8 Mm Detection, NPN/PNP Output

Rs Pro 2377247 Inductive Barrel-Style Proximity Sensor, M12 X 1, 4 Mm Detection, NPN/PNP Output

Rs Pro 2377253 Inductive Barrel-Style Proximity Sensor, M12 X 1, 8 Mm Detection, NPN/PNP Output